stake官网入口

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete;
2、The voltage level is 650V, the current level is 50A@Tc=100℃;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications;
4、Low conduction loss, low switching loss, high reliability;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V;
4、Low conduction loss, low switching loss, meet the high frequency application conditions;
5、The latest generation of micro trench design, a cost-effective product;
SPECIFICATION

DGW50N65CTL0

Related new products

SOD-123HE TVS Diode

Three-phase Rectifier Module N0/N1 Product

SOD-323FL Schottky

Small signal SOT-723 new package

ESD Products for Panel Ports

N+P Dual 30V Trench MOSFET for Fan Control

120V SGT process N-channel MOSFET

100V TOLL Package MOSFET

YBS2G Gulling Patch Rectifier Bridge

NP – sealed MOSFET for cooling fan
网站地图