stake官网入口

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density ,having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform ;
2. 650V breakdown voltage,Ic=160A@Tc=100℃ ;
3. Low conduction loss,low switching loss ;
4. Copacked with Very?soft,fast?recovery?antiparallel?diode ;
SPECIFICATION

DGQ160N65CTS2A

Related new products

High Temperature Resistant Schottky Diode

NP – sealed MOSFET for cooling fan

SGT N60V MOSFET for Clean Energy Field

YBS2G Gulling Patch Rectifier Bridge

SJ MOSFET for PV Micro-inverter & Industrial /Server Power Supplies

IGBT 50A/75A 1200V Discrete for Industrial Control

120V SGT process N-channel MOSFET

SOD-323HE Diode for Automotive 、Home Appliances, Etc

Optimization Design of Rectifier Bridge —— New Package GBU-L

LFPAK56D MOSFET for Automotive
网站地图